MJ10004 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,350-400V,175W)

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SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
The MJ10004 and MJ10006 darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line oper
-ated switch-mode applications such as:
FEATURES:
'Continuous Collector Current - lc = 20 A
"Switching Regulators
•Inverters
•Solenoid and Relay Drivers
•Motor Controls
MAXIMUM RATINGS
NPN
MJ10004
MJ10005
20 AMPERE
POWER DARLINGTON
TRANSISTORS
350-400 VOLTS
175 WATTS
Characteristic
Symbol MJ10004
MJ10005
Unit
Collector-Emitter Voltage
VCEV
Collector-Emitter Voltage
VCEX(SUS)
Collector-Emitter Voltage
VCEO(SUS)
Emitter-Base Voltage
VEBO
Collector Current-Continuous
lc
-Peak
'CM
Base current
'B
Total Power Dissipation eTc=25°C
6TC= 100°C
PD
Derate above 25°C
Operating and Storage Junction
Temperature Range
Tj '"'"sTO
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance Junction to Case Rejc
450
500
400
450
350
400
8.0
20
30
2.5
175
100
1.0
- 65 to +200
Max
1.0
FIGURE -1 POWER DERATING
200
| 175
| 15°
\
| 125
X^
\
i 10°
\
Q 75
| 50
° 25
O
a0
\ 25
TC,TEMPER*TURE(«C)
V
V
V
V
A
TO-3
A
W
W
W/°C
°c
Unit
°c/w
50 75
B_~
c]~
I
i
OL-
H
J-\ _/±x
> I <J^*3.
j*
A
PIN 1.BASE
2.EMITTER
COLUECTOR(CASE)
MILLIMETERS
MIN MAX.
A 38.75 39.96
B 19.28 22.23
C
7.96 9.28
D 11.18 1219
E 2520 26.67
F
0.92 1.09
G
1.38 1.62
H 29.90 30.40
I 16.64 17.30
100 J125 135.088 1754.32600
K 10.67 11.18
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