MJ10000 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,350-400V,175W)

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Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistor
The MJ10000 Darlington transistor is designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads —
210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents
MJ10000
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 VOLTS
175 WATTS
(TO-3)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
Total Power Dissipation @ TC = 25°C
@TC=100°C
Derate above 25° C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle £ 10%.
Symbol
VCEO
VCEX
VCEV
VEB
"c
'CM
IB
!BM
PD
TJ. Tstg
Symbol
ROJC
TL
Value
350
400
450
8
20
30
2.5
5
175
100
1
-65 to +200
Max
1
275
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°c/w
°c
NJ Semi-Conductorsreservesthe right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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