MFE211 Datasheet, PDF (1/2 Pages) Digitron Semiconductors – N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS

LS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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N-. HANNEL DUAL-GATE
SILICON-NITRIDE PASSIVATED
MOS FIELD-EFFECT TRANSISTORS
.. . high Yfs depletion mode dual gate transistors designed for VHP
amplifier and mixer applications.
» MFE211 — VHF Amplifier/IF Amplifier
MFE212 — VHF Mixer
a High Forward Transfer Admittance — !Yfs| = 17-40 mmhos
0 Low Reverse Transfer Capacitance — Crsg = 0.03 pp (Max)
*> Diode Protected Gates
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Drain Current — Continuous
Total Power Dissipation in TA = 25"C
Derate above 25'C
Total Power Dissipation <« TC = 25'C
Derate above 25°C
Storage Channel Temperature flange
Junction Temperature Range
Lead Temperature, 1/16" From Seated
Surface for 10 Seconds
Symbol
VDSX
VDQI
VDG2
IQ1
iG2
'D
PD
PD
Tstg
Tj
TL
Value
20
36
35
±10
-10
50
360
2.4
1.2
8.0
- 65 to + 200
-65to +175
300
Unit
Vdc
Vdc
mAdc
mAdc
mW
mwrc
Watt
mVWC
'C
•c
•c
MFE211
MFE212
CASE
TO-72
DUAL-GATE
MOSFETs
N-CHANNEL — DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.l
Characteristic
| Symbol |
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(ID - lOuAdc. VQIS - VG2S = -".OVdcl
Gate 1 — Source Breakdown Voltage(l)
IIG1 - - 10 mAdc, VG2S - VDS ' °l
VIBRIDSX
V(BRIG1SO
Gate 2 — Source Breakdown VoltageO)
UG2 = ±10mAdc, VG1S = VDS - °l
V(BR)G2SO
Gate 1 to Source Cutoff Voltage
(VDS • 15 Vdc. VG2S = 1.0 Vdc, ID = 20 pAdc)
MFE21 1 _VQiS(off|
MFE212
Gate 2 to Source Cutoff Voltage
IVrjs =» t5Vdc,VGls - 0, ID . 20(iAdc)
MFE21 1 _vG2S(offl
MFE212
Gate 1 Leakage Cbrrent
WGIS - =5.0 Vdc. VG2S - VDS * 01
(VGIS = -5-n vdc, VG2S =• VDS " ". TA - iso°ci
IGISS
Gate 2 Leakage Current
IVG2S " * 5.0 Vdc. VG1S = VDS - ol
IVG2S = -5.0 vdc, VGIS = VDS = °. TA = 15o-ci
ON CHARACTERISTICS
'G2SS
Tero-Gate Voltage Drain Currerit{2)
IVDS . 15 Vdc. VG1s - 0, VQ2S * 4.0Vdcl
IDSS
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance^)
IVfsl
(Vos =• '5 Vdc. VG2s • 4.0 Vdc, Vnis - 0,f -- l 0 kHz)
Reverse Transfer Capacitanr.e
C,,s
(VDS = ''5 Vdc, VQ2S " 4.0 Vdc, Ip - 10 mAdc, f - 1,0 MHjl
Mln
20
±6.0
±6.0
-0.5
-0.5
-0.2
-0.2
-
-
6.0
n
0.005
| Mm
—
—
—
-s.s
-4.0
-2.5
-4.0
±10
10
±10
-10
| 40
1
40
0.05
j Unit
Vdc
Vdc
Vdc
Vdc
Vdc
mAdc
MAdc
nAdc
pAdc
mAdc
mrnhos
pF
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