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MFE140 Datasheet, PDF (1/2 Pages) Motorola, Inc – MFE140
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MFE140
TO-72
MAXIMUM RATINGS
Riling
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
Total Device Dissipation <5 TA =• 25*0
Derate above 26°C
Operating and Storage Channel
Temperature Range
Symbol
VDS
VGS
ID
IG
PD
Value
25
±7.0
30
10
300
Tchannel' -65 to -M76
Tstn
Unit
Vdc
Vdc
mAdc
mAdo
mW
•c
DUAL-GATE
MOSFET
FM AMPLIFIER
N.CHANNEL — DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 26°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Up = 10 fiAdc, Vs = 0, VGI = -4.0 Vdc, VQZ = +4.0 Vdc)
V(BR)DSX
26
Gate 1-Sourca Breakdown Voltage
(IGI - ±io/jAdc, VGZS = "I
Gate 2-Source Breakdown Voltage
IIQ2 = ±10fiAdc, VQ2S - 0)
Gate 1 Leakage Current
(vGis = ±B.O Vdc, vG2s - o, VDS - °)
V(BR)G1SO ±7.0
V(BR)G2SO ±7.0
'G1SS
—
Gate 2 Leakage Current
rvG2s - ±a° vdc, VGIS - o. vDS - o)
Gate 1 to Source Cutoff Voltage
|VDs - 15 Vdc, VG2s - 4.0 Vdc, ID - 200 /lAdc)
IQ2SS
—
VQIS(off)
—
Gate 2 to Source Cutoff Voltage
(VDs - IB Vdc, VGIS - 0, ID = 200 /iAdo)
ON CHARACTERISTICS
vG2S(off)
—
Zero-Gate-Voltage Drain Current
(VDS = « vdc. VQZS - o, vB2s = 4.o vdc)
SMALL-SIGNAL CHARACTERISTICS
IDSS
3.0
Forward Transfer Admittance (Gate 1 connected to Drain)
(Vos - 15 Vdc, VG2S - 4-0 Vdo, ID - 1C mAdc. f - 1.0 kHz)
Input Capacitance
(VDS - is Vdc. VGJS - *.o vdc, ID = IDSS. f - 1.0 MHZ)
Reverse Transfer Capacitance
(VDS - is vdc. VQ2S - 4.o Vdc, ID = IDSS. - i.° MHZ)
IVfsl
10
C|SS
—
^rss
—
Output Capacitance
(VDS - 15 vdc. VQ2S - 4.0 vdc, ID •= IDSS. f - i-o MHZ)
Coss
—
FUNCTIONAL CHARACTERISTICS
Noise Figure (Figure 8)
(See Test Circuit In Figure 11)
NF
—
Common Source Power Gain (Figure 7)
(See Ten Circuit in Figure 11)
Qps
20
Level of Unwanted Signal for 1,0% Cross Modulation (Figure 10)
(See Test Circuit in Figure 11)
—
—
Typ
—
—
—
—
_
—
—
10
—
4.6
0.023
2.E
2.5
23
46
—
±20
±20
20
20
-4.0
-4.0
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
30
mAdc
20
mmhos
7.0
Pf
0.06
pF
4.0
pF
3.6
dB
—
dB
—
mV
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notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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