MBR20100CT Datasheet, PDF (1/2 Pages) Vishay Siliconix – Dual High-Voltage Schottky Rectifiers

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Schottky Barrier Rectifier
, Line.
TELEPHONE: [phone]
[phone]
FAX: [phone]
MBR20100CT
FEATURES
• Low Forward Voltage
• 150°c Operating Junction Temperature
• Guaranteed Reverse Avalanche
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Dual Rectifier Conduction, Positive Center Tap
4
*
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:
ki
1 Q _Fl
kJ
i _{—o 2 4}
MECHANICAL CHARACTERISTICS
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Ip(AV)
Peak-Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)TC=1 33°C
100
V
10
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz) Tc= 133°C
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
Peak Repetitive Reverse Current
IRRM _{(2.0ns, 1.0kHz)}
0.5
A
Tj
Junction Temperature
-65-150 "C
Tstg
Storage Temperature Range
-65-175 °c
dv/dt Voltage Rate of Change (Rated VR)
10,000 V / u s
111
1 2 ;.
TO-220C package
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A
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K
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4
mm
DIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
B 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
u 6.45 6.65
\l 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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