MBR1660CT Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODE

^£.mi-L.onauato'i iJ-^ioaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Ultrafast Recovery Rectifier
TELEPHONE: [phone]
[phone]
MUR1660CT
FEATURES
• Ultrafast Recovery Time
• LOW rorwara vouage
• Low Leakage Current
• 175°C Operating Junction Temperature
• High Temperature Glass Passivated Junction
MECHANICAL CHARACTERISTICS
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260 °C Max.
for 10 Seconds
APPLICATIONS
• Designed for use in switching power supplies, inverters and as
free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
V
Average Rectified Forward Current Per Leg
8
Ip(AV)
(Rated VR)
Total Device
16
A
IFM
Peak Repetitive Forward Current (Rated VR,
Square Wave,20kHz)
Per Diode Leg
16
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
100
A
wave, single phase, 60Hz)
Tj
Junction Temperature
-65-175 6C
Tstg
Storage Temperature Range
-65-175 'C
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DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
u _6,45 6.65
V 8.66 8.86
"NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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