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MBR115P Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – AXIAL LEAD RECTIFIERS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N5817 MBR115P
1N5818 MBR120P
1N5819 MBR130P
MBR140P
AXIAL LEAD RECTIFIERS
. . . employing the Schottky Barrier principle in a large area metal-to-
silicon power diode. State-of-the-art geometry features epitaxial
consr"jction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency
inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low vf
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
15, 20, 30, 40 VOLTS
•MAXIMUM RATINGS
Riling
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
IVR(eqU,vl<0.2VR(dc>.
TL •= 90°C,
R9JA • 80°C/W, P.C. Board
Mounting, see Note 2. TA * 55°C)
Ambient Temperature
(Rated VR(dc), PplAVI " 0.
R9JA-80°C/WI
Non-Repetitive Peak Surge Current
(Surge applied at rated load
conditions, half-wave, single phase
60 Hz, TL • ?0°C>
Operating and Storage Junction
Temperature Range
(Reverse Voltage applied)
Peak Operating Junction Tempereture
(Forward Current applied)
Symbol
VRRM
VRWM
VRSM
VRIRMSI
'FSM
TJ(pkl
.ft
si §•
30
36
10
14
90
85
80
°C
. 25 (for one cycle) •
°C
•THERMAL CHARACTERISTICS INote 21
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RSJA
80
°c/w
•ELECTRICAL CHARACTERISTICS (TL - 25°C unless otherwise noted! (21
Charicterntic
p*
oo
i o>
III
%
m EEC
Symbol ^
"~
*" soasrnso s Unit
Maximum Instantaneous Forward
Forward Voltage (1)
lip -0.1 A)
lip • LOAl"^-
lip -3.0 A)
VF
V
0.320 0.330 0.340 , 0.350 0.350
0.450 0.950 0.600. 0.550 0.600
0.750 0.875 0.900-' 0.850 0.900
Maximum Instantaneous Reverse
'R
mA
Current @ Rated dc Voltage (1)
(TL - 25°CI
(TL-100°C)
1.0
1.0
1.0
1.0
1.0
10
10
10
10
10
(1) Pulse Twt: Pulse Width - 300 lit. Duty Cycle - 2.0«.
(2) Lead Tomperature reference it cathode lead 1 /32" from case.
•Indicates JEDEC Registered Data for 1NS817-19.
MILLIRIETERS INCHES
DIM MIN MAX MIN MAX
A 5.97 660 0.235 0.260
B IM 3.05 0.110 0.120
U 0.76 O.B6 0.030 0.034
K 27.94 -
1 100 -
MECHANICAL CHARACTERISTICS
CASE
Transfer molded plastic
FINISH
All external surfaces
corrosion-resistant and the terminal
leads are readily solderable
POLARITY
Cathode indicated by
polarity band.
MOUNTING POSITIONS
Any
SOLDERING
,220°C 1/16" from
case for »n seconds
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductorsis believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveredin its use.
N.I Semi-Conductors encourages customersto verify that datasheets are current before placing orders.