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MBR115P Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – AXIAL LEAD RECTIFIERS | |||
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N5817 MBR115P
1N5818 MBR120P
1N5819 MBR130P
MBR140P
AXIAL LEAD RECTIFIERS
. . . employing the Schottky Barrier principle in a large area metal-to-
silicon power diode. State-of-the-art geometry features epitaxial
consr"jction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency
inverters, free wheeling diodes, and polarity protection diodes.
⢠Extremely Low vf
⢠Low Stored Charge, Majority Carrier Conduction
⢠Low Power Loss/High Efficiency
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
15, 20, 30, 40 VOLTS
â¢MAXIMUM RATINGS
Riling
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
IVR(eqU,vl<0.2VR(dc>.
TL â¢= 90°C,
R9JA ⢠80°C/W, P.C. Board
Mounting, see Note 2. TA * 55°C)
Ambient Temperature
(Rated VR(dc), PplAVI " 0.
R9JA-80°C/WI
Non-Repetitive Peak Surge Current
(Surge applied at rated load
conditions, half-wave, single phase
60 Hz, TL ⢠?0°C>
Operating and Storage Junction
Temperature Range
(Reverse Voltage applied)
Peak Operating Junction Tempereture
(Forward Current applied)
Symbol
VRRM
VRWM
VRSM
VRIRMSI
'FSM
TJ(pkl
.ft
si §â¢
30
36
10
14
90
85
80
°C
. 25 (for one cycle) â¢
°C
â¢THERMAL CHARACTERISTICS INote 21
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RSJA
80
°c/w
â¢ELECTRICAL CHARACTERISTICS (TL - 25°C unless otherwise noted! (21
Charicterntic
p*
oo
i o>
III
%
m EEC
Symbol ^
"~
*" soasrnso s Unit
Maximum Instantaneous Forward
Forward Voltage (1)
lip -0.1 A)
lip ⢠LOAl"^-
lip -3.0 A)
VF
V
0.320 0.330 0.340 , 0.350 0.350
0.450 0.950 0.600. 0.550 0.600
0.750 0.875 0.900-' 0.850 0.900
Maximum Instantaneous Reverse
'R
mA
Current @ Rated dc Voltage (1)
(TL - 25°CI
(TL-100°C)
1.0
1.0
1.0
1.0
1.0
10
10
10
10
10
(1) Pulse Twt: Pulse Width - 300 lit. Duty Cycle - 2.0«.
(2) Lead Tomperature reference it cathode lead 1 /32" from case.
â¢Indicates JEDEC Registered Data for 1NS817-19.
MILLIRIETERS INCHES
DIM MIN MAX MIN MAX
A 5.97 660 0.235 0.260
B IM 3.05 0.110 0.120
U 0.76 O.B6 0.030 0.034
K 27.94 -
1 100 -
MECHANICAL CHARACTERISTICS
CASE
Transfer molded plastic
FINISH
All external surfaces
corrosion-resistant and the terminal
leads are readily solderable
POLARITY
Cathode indicated by
polarity band.
MOUNTING POSITIONS
Any
SOLDERING
,220°C 1/16" from
case for »n seconds
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductorsis believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveredin its use.
N.I Semi-Conductors encourages customersto verify that datasheets are current before placing orders.
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