English
Language : 

MBR10200CT Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
<3zml-Con.du.etoi <LP
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Schottky Barrier Rectifier
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MBR10200CT
FEATURES
• Low Forward Voltage
• 150°c Operating Junction Temperature
• Guaranteed Reverse Avalanche
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
4
ki
< —o 2 4
kj
MECHANICAL CHARACTERISTICS
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max.
for 1 0 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VRRM
VRWM
VR
lF(AV)
IFSM
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) Tc= 133°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
half-wave, single phase, 60Hz)
*
Junction Temperature
VALUE UNIT
200
140
V
200
10
A
150
A
-55-150 'C
Tstg
Storage Temperature Range
-55-175 •c
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/us
12 3
TG-220C package
* B• f
X" s
fjil^yi
r
\'
A
f
f*
*H
JMCS
"' '
.
L
t
\*
K
D
t
J
f
C
i
!
G «-
'
.
mm
DIN WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
G 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors