LSK389 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – LC ARGUS LED Low current 3 mm T1 LED, Non Diffused

dVss..iv
-Conaucto't \Pioaacti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FEATURES
ULTRA LOW NOISE
en = 0.9nV/VHz (typ)
TIGHT MATCHING
IVGsi-2l = 20rnV max
HIGH BREAKDOWN VOLTAGE
BVGss = 40V max
HIGH GAIN
G(s = 20mS (typ)
LOW CAPACITANCE
25pF typ
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65to+150°C
Junction Operating Temperature
-55to+135°C
Maximum Power Dissipation
Continuous Power Dissipation @ +25°C
400mW
Maximum Currents
Gate Forward Current
lc(F) = 10mA
Maximum Voltages
Gate to Source
VGSS = 40V
Gate to Drain
VGDS = 40V
TELEPHONE: [phone]
[phone]
LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET
Top View
TO-71
S2
D2o 6
G2
SOIC-A
T|G2
7]ss
] D2
T] S2
For equivalent single version, see LSK170 family.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
VGSI — VGS^ ^{Differential Gate to Source Cutoff}
Voltage
20
IDSSI
Gate to Source Saturation Current Ratio 0.9
IDSS2
UNITS
mV
—
CONDITIONS
VDS = 10V, lD=1mA
VDS = 1 0V, VGS = 0V
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
BVcss
Gate to Source Breakdown Voltage
-40
VGS(OFF) Gate to Source Pinch-off Voltage
-0.15
-2
LSK389A 2.6
6.5
loss
Drain to Source Saturation ^{LSK389B 6}
Current
LSK389C 10
12
20
LSK389D 17
30
IGSS
Gate to Source Leakage Current
-200
IG1G2
Gate to Gate Isolation Current
±1.0
UNITS
V
V
mA
pA
uA
CONDITIONS
VDs = 0, !D=-100uA
VDs = 10V, !D=0.1uA
VGS = -30V, VDS = 0
VG1-G2 = ±45V, ID=IS =OA
_ Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Quality Semi-Conductors