L911 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – OPTO ELECTRONICS DETECTORS-PROGRAMMABLE UNIJUNCTION TRANSISTORS

^zmi-donducto'i ^Pioduati, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
OPTO ELECTRONICS
DETECTORS-PROGRAMMABLE UNIJUNCTION TRANSISTORS
GE Type
L14T
ilnode-Cathdde
Voltage
Max.
(V)
±40
D.C. Anode
Current
Max.
(ma)
100
RiseTin-e
t,
Typica
(nsec)
80
Irraoiance to
Trigger
<S> Rg^SOOK'.!, Vs = 10V
Max.
ImW/Cm2
Forward on Voltage
VT
Max.
(V)
1.5
TELEPHONE: [phone]
[phone]
FAX: [phone]
P;
Max.
(mw;
200
Package
Type
TO-92
Package
Outline
Mo.
263
Specification
Sheet
No.
55.54
OPTO ELECTRONICS
DETECTORS-SCSs
CET/pe
L1V
Voltage
/mode to Cathode
-"orward and Reverse
M_<a_vn_;.
Forward Voltage
al 175ma Anode Current
<S> Ro. = 27k!!
Max.
(V)
2.3
Holding
Current
(a) R,,,. = 27kn
Max.
(mA)
|*g$|*
Cathode Gate Currert
to Fire
@ VAC = 40V
RA = 800H
Max.
(;iA)
10
Effective Irradiance
To Trigger
@ VAC — 40V
RA = 800!!
Max.
lOmW/Cm'
Package
Type
TO-18
Package
Outline
No.
53
Specification
Sheet
No.
55.41
OPTO ELECTRONICS
DETECTORS-SCR's
GE Type
L8U
L8F
UA
L86
L8G
L81IU
L811F
[aim
LflllB
L811G
L9U
L9F
L9A
L9B
L9G
L911U
L911F
L911A
L911B
L911G
PflV/Vso
»
•_t•_o»_o'•
t»
200
25
»'•
100
'isr*
200
25 .
-SB I
m'
158
W
25
50
I1*» _'
200
Inc <a 25°C
M₍a_«x_r
.44
.44
.44
.44
.44
.77
.77
.77
.77
.77
.44
.44
.44
.44
.44
.77
.77
.77
.77
.77
Max. Temp. °c
Opei. Stor.
«r^MwoV°
no»
ISO*
.190*
100"
100°
--⁴a⁹»^B»^»
«*•; WP«.
109" tto»
«*- •m£: . W I^MTTP'' ,
IW»
?-w»
>«*>-;•
ioe»
•MSp».,
•'W
108» 150»
U»0° -HP.
a«o» «0°
..¹.⁰^⁰i^°-,^•.^{' •'M0»}
iso»
100°
150°
top" 150°
108°
180°
Effective Irradiance
(mw/cm!) to Trigger '
at25°C TJ, 6Vdc
Win.
Max.
0.68
10.0
0.68
10.0
0.68
10.0
0.68
10.0
0.68
10.0
0.68
10.0
0.68
10.0
0.68
10.0
0.68
10.0
0.68
10.0
0.68
4.2
0.68
4.2
0.68
4.2
0.68
4.2
0.68
4.2
0.68
4.2
0.68
4.2
0.68
4.2
0.68
4.2
0.68
4.2
Package
Outline
NO.
101
101
W
101
101
102
102
102
102
102
Ml
101
1M
101
iet
102
102
102
102
m
Snee! No.
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
NOTE: Gate current to trigger from direct electrical supply is 20 «A typical, 200 #A maximum at 25°C Tj.
1 Effective Irradiance to trigger decreases with increasing anode voltage and increasing gate to cathode resistance.
?63
101
NJ Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without
nonce. Information fijrnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or>ing
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
-Conductors encourages customers to verify that datasheets are current before placing orders.
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