KSD5072 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Silicon NPN Power Transistor
KSD5072
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
• High Reliability
• Built-in Damper Diode
B
. ,.
2
•jo—« k ¥
TI^LJ
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3PML package
APPLICATIONS
• Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V'
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
5
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
16
A
60
W
150
.•c
Tstg
Storage Temperature Range
-55-150
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mm
DIM MIN MAX
A 18.90 20.10
B 15.90 16.10
C 5.50 5,70
D 0.90 1,10
F 3.30 3,50
G 2.90 3,10
K 5,90 6.10
J 0,595 0.605
K 22,30 22.50
L 1.SO 2,10
N 10,80 11.00
u 4.90 5.10
R 3.75 3.95
S 3.20 3,40
U 9.90 10,10
Y 4,70 4.30
Z 1.90 2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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