KSD5070 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

Jziizu <^)£.mi-(-on.auctoi Lrioauchi, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
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FAX: [phone]
KSD5070
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
• High Reliability
• Built-in Damper Diode
f
1_,
1~mp
^
PIN 1.BASE
2. COLLECTOR
3.BJTTER
TO-3PML package
APPLICATIONS
• Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO ^{Collector-Emitter Voltage}
800
V'
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
2.5
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
10
A
50
W
150
•c
-55-150 °c
{ : • : . . • > ^{-*• C}
^Q__
A •->
u₁
•:•
^ F"
* • . .-
•- ^,
• Y •*-.. .
t.
l"'
Z
^
1 , '•'
*~ J
» R ->-
»-K^^
mm
DIM WIN MAX
A 19,90 20.10
B 15.90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3,50
G 2.90 3.10
H 5,30 6.10
J 0,595 0.605
K 22.30 22,50
L 1.90 2,10
N 10.80 _11.00
u 4.30 5.10
R 3.75 3.95
S 3.20 3,40
U 9,90 10.10
Y 4,70 4.90
Z 1.90 2.10
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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