IVN5000 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Field Effect Power Transistor

Iziizu <z3E.mL-L.ona.LL<2toi LPioauati, Una.
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IVN5000,1
AN Series
.7 AMPERES
40-100 VOLTS
RDS(ON) = 2.5 a
TELEPHONE: [phone]
[phone]
FAX: [phone]
N-CHANNEL
FIELD EFFECT POWER TRANSISTOR
CASE STYLE TO-237
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Applications
• LEDand lamp drivers
• High gain, wide-band amplifiers
• High speed switches
• Line drivers
• Logic buffers
• Pulse amplifiers
Features
High speed, high peak current switching
Inherent current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple, straight-forward DC biasing
Inherent protection from thermal runaway
Reliable, low cost plastic package
t
J .105^871
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S .096(2.41)
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^ 095(2.41)
UNIT
TVPE IEfiM.1 TERR2
POWER MOS EFT TO-237 SOURCE GATE
TERM.3
DRAIN
TAB
CHAIN
maximum ratings 0"^= 25°C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RQS = 1MH
SYMBOL
VDSS
VDGR
Continuous Drain Current @ TA = 25°C
"D
Peak Drain Current111
Gate-Source Voltage
Total Power Dissipation @ TA = 25° C
Derate Above 25°C
Operating and Storage
Junction Temperature Range
'DM
VGS
PD
TJ, TSTG
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
thermal characteristics
D
E
F
H
40
60
80
100
40
60
80
100
0.7
0.7
0.7
0.7
2.0
2.0
2.0
2.0
±30
±30
±30
±30
2.0
2.0
2.0
2.0
16
16
16
16
-55 to 150 -55 to 150 -55 to 150 -55 to 150
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
R0JA
TL
62.5
62.5
62.5
62.5
300
300
300
300
UNITS
Volts
Volts
A
A
Volts
Watts
mW/°C
°C
°C/W
°C
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