IRG4PC40S Datasheet, PDF (1/3 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, LJnc.
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INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40S
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
n-channel
VCEs = 600V
VCE(on)typ. = 1.32V
@VGE = 15V, IC = 31A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
VCES
lc @ Tc = 25°C
IC@TC = ioo°c
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
ICM
ILM
VGE
EARV
PD @ Tc = 25°C
PD@TC = IOO°C
Pulsed Collector Current ©
Clamped Inductive Load Current ©
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ®
Maximum Power Dissipation
Maximum Power Dissipation
Tj
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
Rejc
Recs
RIUA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
600
60
31
120
120
±20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 Ibf-in (1.1N-m)
Units
V
A
V
mj
W
°C
Typ.
—
0.24
6 (0.21)
Max.
Units
0.77
°c/w
40
g (oz)
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