IRFZ46 Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
HEXFET® Power MOSFET
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Una.
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IRFZ46
VDSS = 50V
RDS(on)
ID = 50*A
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ Tc = 25°C
\9 Tc= 100°C
I DM
PD @ Tc = 25°C
VGS
EAS
dv/dt
Tj
TSTG
Parameter
Continuous Drain Current, VGS @ 1 0 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current ©
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ©
Peak Diode Recovery dv/dt ®
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Rejc
Recs
RWA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Qualify Semi-Conductors
TO-220AB
Max.
50*
38
220
150
1.0
±20
100
4.5
-55 to +175
300 (1 .6mm from case)
10lbf-in(1.1 N.m)
Units
A
W
W/°C
V
mJ
V/ns
°C
Min.
Typ.
Max.
Units
—
—
1.0
—
0.50
—
°C/W
—
—
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