IRFZ44N Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
N-Channel MOSFET Transistor
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IRFZ44N
FEATURES
• Drain Current -ID=49A@ TC=25°C
• Drain Source Voltage-
: VDSS= 55V(Min)
• Static Drain-Source On-Resistance
: RDs(on) = 0.032 Q (Max)
• Fast Switching
DESCRIPTION
• Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VDSS Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
b
Drain Current-Continuous
IDM
Drain Current-Single Pluse (tp=S10 u s)
PD
Total Dissipation @Tc=25'C
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
55
V
+ 20
V
49
A
160
A
94
W
175
'C
-55-175 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.5
62
UNIT
"C/W
•c/w
0( 2)
p y GO)
fi
*^{II1 2 -.•}
^ ^s<3)
PIN I.Gat e
2.Dra in
3.SOL rce
TO-22OC package
""
J-^f L
»
— poo
\_i. • _{H •' •} B M•••O• OV_;
V
I ^{T |}
K
+41* D
f
i
•H ^{G *-•}
»
c
i
mm
DW MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
L) 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Cl 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
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