IRFZ44 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Power MOSFET

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Advanced Power MOSFET
FEATURES
» Avalanche Rugged Technology
» Rugged Gate Oxide Technology
» Lower Input Capacitance
» Improved Gate Charge
» Extended Safe Operating Area
« 175°C Operating Temperature
» Lower Leakage Current: 10uA(Max.) @ VDS = 60V
» Lower RDS(ON): 0.020Q (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
'DM
VGS
EAS
IAR
EAR
dv/dt
PD
Tj , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp, for Soldering
Purposes, 1/8. from case for 5-seconds
Thermal Resistance
Symbol
RBJC
ROCS
RBJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
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IRFZ44
BVDSS : 60V
f^DS(on) = ^0.02412
ID = 50 ^A
TO-220
LGate 2. Drain 3. Source
Value
60
50
35.4
200
±20
857
50
12.6
5.5
126
0.84
-55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
Max.
Units
-
1.19
0.5
-
°C/W
-
62.5
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