IRFZ34 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Power MOSFET

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFZ34
Power MOSFET
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PRODUCT SUMMARY
VDS(V)
FlDS(on) (^)
Qg (Max.) (nC)
60
VGS = 10V
46
0.050
Qgs(nC)
11
Qgd (nC)
Configuration
TO-220AB
22
Single
J^u,
G O If
0
s
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
Tc = 25 °C
V-c it 10 V
ID
TC = 100°C
Pulsed Drain Current3
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Tc = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Tj, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting T, = 25 °C, L = 259 uH, Rg = 25 U, IAS = 30 A (see fig. 12).
c. ISD £ 30 A, dl/dt < 200 A/MS, VDD < VDS, Tj < 175 °C.
d. 1.6 mm from case.
LIMIT
60
±20
30
21
120
0.59
200
88
4.5
-55to +175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Ibf • in
N -m
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