IRFZ10 Datasheet, PDF (1/2 Pages) International Rectifier – HEXFETR POWER MOSFET

«_/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
One..
HEXFET* Power MOSFET
Dynamic dv.'dt Rating
175-C Operating Ternp«ralijr«
Fasl Switching
Fn=,e rl Pa'alleing
Simple Drive Requirements
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IRFZ10
= 0.2012
The TO-220 package is universally tirt»furr«d luf all rommercial-industnal
appkaliors at oower dissipation levete 10 appiojumalety 50 rtatts. T>j luw
tlwrmal r««stanefl AIX) ow pacNA^e cosi oi the TO-220 ccnlribute to
acceptance Ihroucfioul the industry.
G
Gate
D
Drain
TO-220AB
S
Source
Absolute Maximum Ratings
In <& To = 25"C
I'J*' T O " 100'C
I™
PC @ Tc - 25"C
PaiErne-tef
Ccnlmucus Drar Currcni, Vi/: S ;o V
Continuous Drar Curreni, VGS 9 1 0 V
Pulsed Drain Current I
Power Dissipation
Unear Denting Factor
Gale-10-Sou'ce Voltage
EAB
J'/'Ut
Tj
TSTC.
:-ir;gly KLli^ A.,ri i-.rtJi* :£nf-'i|v
Peak Diode Recovery dv/dt -1
Operating JuricJion and
Storage Tempwature Ran^e
Soldering Temperature, for 10 sGCords
Thermal Resistance
\1
;4 ..
J.jnci of-io-C,-s:'
- :-
•..!..-•. in-oi-K =..it. Grossed yj-tace
-I,.,,..
i: . • • --r - • - Arrhieni
Max_
10
72
40
43
0.29
120
47
_
-55 10+175
300 {1 6mm from case)
10 tof-ir, (1.1 N*m)
.Jll!'.,
A
|W
W/"C
V
mj
V/ns
-c
V n.
• 1'
Wax
...I-.
-
3.5
—
0.50
•ow
—
—
62
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