IRFM250 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

^E.mi-dondactoi {Piodueti, -Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
POWER MOSFET
THRU-HOLE (TO-254AA)
IRFM250
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
l D @ V G S = 10V,TC = 250C Continuous Drain Current
ID@VGS = IOV,TC = IOO°C Continuous Drain Current
Units
27.4
17
A
IDM
Pulsed Drain Current 1
110
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
150
W
1.2
w/°c
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy (?)
500
mJ
IAR
Avalanche Current ,1;
27.4
A
EAR
Repetitive Avalanche Energy i
15.0
mJ
dv/dt
Peak Diode Recovery dv/dt <D
5.0
V/ns
Tj
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
°C
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical)
g
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time or'going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
\ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.