IRFM240 Datasheet, PDF (1/3 Pages) Seme LAB – N-CHANNEL POWER MOSFET

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on) ID
IRFM240
0.18 Q
18A
TELEPHONE: [phone]
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FAX: [phone]
IRFM240
200V. N-CHANNEL
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
Units
|D @VGS = 10V,Tc = 25°C Continuous Drain Current
ID @ VQS = iov, TC = ioo°c Continuous Drain Current
18
11
A
IDM
PD @ TC = 25°C
Pulsed Drain Current ®
Max. Power Dissipation
Linear Derating Factor
72
125
w
1.0
wrc
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy @
450
mJ
IAR
Avalanche Current ©
18
A
EAR
Repetitive Avalanche Energy j
12.5
mJ
dv/dt
TJ
Peak Diode Recovery dv/dt ®
Operating Junction
5.0
-55 to 150
V/ns
TSTG
Storage Temperature Range
°C
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
2.6 (Typical)
g
For footnotes refer to the last page
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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