IRFF9120 Datasheet, PDF (1/2 Pages) Intersil Corporation – 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6845
IRFF9120
MECHANICAL DATA
Dimensions in mm (inches)
864(034)
9 40 (0 37)
801 (0315)
9,01 (0 355)
J.0(5 (0,16)
467(0.18)
P-CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
12 70
10.500);
0 41 (0 016)
053(0.021)'
dra
5 08 (0.200)
V _DSS
I_D(cont)
RDS(on)
-100V
-4.0A
0.60Q
0 74 (0 029;.
1 14 (0.045)'
TO-39
PIN1-Source
PIN 2-Gate
! 2.54
i (0.1 OOj
PIN 3-Drain
FEATURES
• HERMETICALLY SEALED TO-39 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate - Source Voltage
ID
Continuous Drain Current (VGS = 0 , Tcase = 25°C)
ID
Continuous Drain Current (VGS = 0 , Tcase = 1 00°C)
'DM
Pulsed Drain Current 1
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
±20V
-4.0A
-2.6A
-16A
20 W
0.16 W/°C
Tj , Tstg
TL
Rejc
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
-55 to 150°C
300°C
6.25°C/W
Notes
1) Repetitive Rating - Pulse width limited by maximum junctiontemperature.
NJ Scmi-Coiiductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information- furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of"going to press. Hovvever N.I
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers to verify that datasheet-., are current before placing orders.