IRFF9110 Datasheet, PDF (1/2 Pages) International Rectifier – HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

!j
C/
u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on)
IRFF9110 -100V 1.20
ID
-2.5A
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRFF9110
100V, P-CHANNEL
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Features:
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• Hermetically Sealed
• Simple Drive Requirements
• Ease of Paralleling
Absolute Maximum Ratings
Parameter
lD@VGS = -10V.Tc = 25°C Continuous Drain Current
ID@VGS = -IOV,TC = IOO°C Continuous Drain Current
[DM
PD @ TC = 25°c
Pulsed Drain Current CD
Max. Power Dissipation
Linear Derating Factor
VGS
HAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy &
Avalanche Current Ci
Repetitive Avalanche Energy 5
Peak Diode Recovery dv/dt 1;
Tj
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
-2.5
-1.6
A
-10
15
W
0.12
W/°C
±20
V
87
mJ
—
A
—
mJ
-5.5
V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believedto be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscoveredin its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors