IRFF430 Datasheet, PDF (1/2 Pages) Intersil Corporation – 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET

t^ejm.l-donJ.uatot. tPioduati, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
2N6802
IRFF430
TELEPHONE: [phone]
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FAX: [phone]
MECHANICAL DATA
Dimensions in mm (inches)
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV _DSS
D(cont)
^DS(on)
500V
2.5
1.5Q
TO39- Package
Underside View
Pin 1 - Source Pin 2 - Gate
Pin 3 - Drain
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate - Source Voltage
±2QV
ID
Continuous Drain Current (VGS = 10V , Tcase = 25°C)
2.5A
ID
Continuous Drain Current (VGS = 10V , Tcase = 100°C)
1.5A
IDM
Pulsed Drain Current 1
11A
PD
Power Dissipation @ Tcase = 25°C
25W
Linear Derating Factor
0.2W/°C
EAS
Single Pulse Avalanche Energy 2
0.35mJ
dv/dt
Peak Diode Recovery3
3.5V/ns
TJ - Tstg
Rejc
RSJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
-55to+150°C
5.0°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width < 300^8, 6 < 2%
2) @ VDD = 50V , Peak IL = 2.5A, Starting Tj = 25°C
3) @ ISD < 2.5A , di/dt < 75A/^is , VDD < BVDSS , Tj < 150°C , SUGGESTED RG = 7.5Q
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Information furnished hy NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press However NJ
Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers to vcrif'v that datasheets ure current before placing orders.