IRFF220 Datasheet, PDF (1/2 Pages) Intersil Corporation – 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET

^s.mi-dondu.cto'L Lp10ducts., Una
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFF220
TELEPHONE: [phone]
[phone]
FAX: [phone]
Absolute Maximum
ID @ VGS = iov, TC = 25°c
ID @ VGS = iov, TC = ioo°c
IDM
PD @ TC = 25°c
VGS
EAS
IAR
EAR
dv/dt
Tj
TSTG
Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ®
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ®
Avalanche Current ®
Repetitive Avalanche Energy ®
Peak Diode Recovery dv/dt ®
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
3.5
2.25
A
14
20
W
0.16
w/°c
±20
V
66
mJ
—
A
—
mJ
5.0
V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
Quality Semi-Conductors
dim. in in.