IRFF130 Datasheet, PDF (1/3 Pages) Intersil Corporation – 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET

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IRFF130
8.0A, 100V, 0.180 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF130
TO-205AF
IRFF130
NOTE: When ordering, use the entire part number.
Features
• 8.0A, 100V
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
Symbol
6S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
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