IRFF120 Datasheet, PDF (1/3 Pages) Intersil Corporation – 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

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IRFF120
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6.0A, 100V, 0.300 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF120
TO-205AF
IRFF120
NOTE: When ordering, use the entire part number.
Features
• 6.0A, 100V
• rDS(0N) = 0.300Q
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Ga
6S
Packaging
JEDEC TO-205AF
DRAIN -
(CASE)
GATE
SOURCE
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