IRFF110 Datasheet, PDF (1/2 Pages) Intersil Corporation – 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

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SPRINGFIELD, NEW JERSEY 07081
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IRFF11O
IRFF1TI
IRFFT13
100 Volt, 0.60 Ohm HEXFET®
Features:
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• NoSecond Breakdown
a Excellent Temperature Stability
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
Product Summary
control, freedom from second breakdown, very fast
switching, ease of paralleling, and temperature sta-
Part Number
VDS
RDS(on)
ID
bility of the electrical parameters.
IRFF110
100V
o.en
3.5A
They are well suited for applications such as switching
IRFF111
60V
0.6S7
3.5A
Dower supplies, motor controls, inverters, choppers,
IRFF112
100V
o.sn
3.0A
audio amplifiers, and high energy pulse circuits.
IRFF113
60V
o.sn
3.0A
CASE STYLE AND DIMENSIONS
4.57 (0.180) MAX.
0 6 6 10 0341
112100261
•— DIA—*•
2510325)
«-DlA-«H
4 5 7 (0.1801
0.4SIC018I
me 10 oi4>
4 0 6 ( 0 160]
11
!
13.03 D.7 11
14 22 '056.
REF.
12 70(050)
DM 10 02II /
0.41 10.016] "'
3 PLACES
Conforms to JEDEC Outline TO-20SAF ITO-39)
Dimensions in Millimeters and (Inches)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
\ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
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