IRF9240 Datasheet, PDF (1/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET

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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF9240
-200V 0.5Q -11A
IRF9240
200V, P-CHANNEL
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = ov, TC = 25°c
ID (a{ VGS - <>v, TC = loo'c
IDM
PD @ TC = 25°c
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current (D
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
l;-AS
Single Pulse Avalanche Energy ®
IAR
Avalanche Current CD
EAR
Repetitive Avalanche Energy ©
dv/dt
Peak Diode Recovery dv/dt ®
TJ
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
-1 1
-7.0
A
-44
125
w
1.0
w/°c
±20
V
500
mJ
-1 1
A
12.5
mJ
-5.0
V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
1 l.S(typical)
g
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