IRF740 Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One.
N-Channel MOSFET Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRF740
DESCRIPTION
• Drain Current-ID= 10A@ TC=25°C
• Drain Source Voltage-
: VDSS= 400V(Min)
• Static Drain-Source On-Resistance
: RDs(on) = 0.55 Q (Max)
• Fast Switching Speed
APPLICATIONS
• Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS.AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (Vos-0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous® TC=25°C
10
A
Plot
Total Dissipation@TC=25'C
125
W
Tj
Max. Operating Junction Temperature
150
"C
Tstg
Storage Temperature Range
-65-150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX UNIT
1.0 °c/w
* ->
™^I
• \2
Ts
0(2)
o
SJ) ^«XOJ
O
S(J)
PIN LGate
2. Drain
3. Source
TO-220C package
* BH
k-ft! ^{t. -V~jL- F}
Mo
Uir
i* !
A'
,-\S
r !rI '
\<
K
»
rh **M* D
0
3 •-
»
1i1
C1
1
i
-* _*S
\O
^
L
f
-•» _R|-*
mm
DtM MSN MAX
A 15.70 15.90
B 0.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
^ ^{0.44 0.46}
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 _1.31
U 6.45 6.65
V 8.66 8.86
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to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in itsuse.
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