IRF720 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

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REPETITIVE AVALANCHE AND dv/dt RATED*
IM-CHAIMNEL
400 Volt, 1.8 Ohm HEXFET
TO-220AB Plastic Package
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Product Summary
Part Number BVDSS _RDS(on)
"D
IRF720
400V
1.8Q
3.3A
IRF721
350V
1.80
3.3A
IRF722
400V
2.50
2.8A
(RF723 ' 350V
2.5(1
2.8A
FEATURES:
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
CASE STYLE AND DIMENSIONS
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•This data sheet applies to product with batch codes that begin with a digit, a. 2A3B
Co* Styl. TO-220AB
Oimeniioni in Millimeters and llnchn)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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