IRF710 Datasheet, PDF (1/3 Pages) Intersil Corporation – 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
., One..
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IRF710-713
MTP2N35/2N40
N-Channel Power MOSFETs,
2.25 A, 350-400 V
Power And Discrete Division
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high speed applications,
such as switching power supplies, converters, AC and DC
motor controls, relay and solenoid driver and high energy
pulse circuits.
TO-220AB
Low RDS(on)
VGS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
IDSS, VDS(on). Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
Maximum Ratings
IRF710
IRF711
IRF712
IRF713
MTP2N35
MTP2N40
Symbol
Characteristic
VDSS
VDQR
Drain to Source Voltage'
Drain to Gate Voltage'
RQS = 20 kO
VGS
Tj. Ts|g
Gate to Source Voltage
Operating Junction and
Storage Temperatures
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Maximum On-State Characteristics
RDS(on) ^{Static Drain-to-Source}
On Resistance
b
Drain Current
Continuous at TC = 25°C
Continuous at Tc= 100°C
Pulsed
Maximum Thermal Characteristics
Rftjc
Thermal Resistance,
Junction to Case
RftJA
Thermal Resistance,
Junction to Ambient
PD
Total Power Dissipation
at Tc = 25°C
Rating
IRF710/712
MTP2N40
400
400
±20
-55 to +150
275
Rating
IRF711/713
MTP2N35
350
350
±20
-55 to +150
275
IRF710-711
3.6
IRF712-713
5.0
MTP2N35/40
5.0
1.5
1.4
1.3
1.0
0.9
0.8
6.0
5.0
5.0
6.4
6.4
2.5
80
80
80
20
20
50
Unit
V
V
V
°c
°c
Unit
n
A
°C/W
"C/W
W
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