IRF630N Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
N-Channel MOSFET Transistor
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IRF630N
DESCRIPTION
• Drain Current -ID=9.3A@ TC=25°C
• Drain Source Voltage-
: VDSS= 200V(Min)
• Static Drain-Source On-Resistance
• Fast Switching Speed
• Low Drive Requirement
APPLICATIONS
• This device is n-channel, enhancement mode, power MOSFET
designed especially for high power, high speed applications,
such as switching power supplies.UPS, AC and DC motor con-
trols, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL ARAMETER
VALUE UNIT
VDSS Drain-Source Voltage (VGS=O)
200
V
Vos
Gate-Source Voltage
±20
V
ID
Drain Current-continuous® TC=25'C
9.3
A
Po
Total Dissipation@TC=25'C
82
W
T,
Max. Operating Junction Temperature 175
r
Tstg
Storage Temperature Range
-55-175 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
1.83
Thermal Resistance, Junction toAmbient 62
"C/W
•c/w
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S(3)
LGate
2. Drain
3. Source
TO-220C package
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DIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Cl 2.70 2.90
R 2.50 2.70
S 1.29 1.31
u 6.45 6.65
tf 8.66 8.86
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notice. Information furnished by NJ Semi-Conductorsis believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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