IRF630B Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET

^s.nii-donaucto'L L/^ioaueti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
N-Channel MOSFET Transistor
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FAX: [phone]
IRF630B
DESCRIPTION
• Drain Current -ID= 9A@ TC=25°C
• Drain Source Voltage-
: VDss= 200V(Min)
• Static Drain-Source On-Resistance
: RDs<on) = 0.4 n (Max)
• Fast Switching Speed
APPLICATIONS
• Desinged for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for unin-
terrupted power supply and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VQS=O)
200
V
Ves
Gate-Source Voltage
±30
V
ID
Drain Current-continuous® Tc=25°C
9
A
PD
Power Dissipation@Tc=25°C
72
W
Tj
Max. Operating Junction Temperature
150
•c
Tstg
Storage Temperature Range
-55-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rthj-c ^{Thermal Resistance, Junction to Case}
1.74 °c/w
Rth j-a ^{Thermal Resistance, Junction to Ambient 62.5 =C/W}
0( 2)
ImF
P ^f
s<3)
ti, !_{i, i1}
12 2
PIW ^I.Gate
2.Dra in
3,Soi rce
TO-22 OC package
* B P.
_ V -»j F
M1_k^r;
A
••;>
~eo*
f_ii
n^{^U ' "}\ _*^" _{* L} i
V
i
K
1
D
f
IV*
-H ^{G [*-}
*
c ^{-- i}
i^!
J
mm
DIIV WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13,40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
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