IRF620 Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, IJnc,
Power MOSFET
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PRODUCT SUMMARY
VDS(V)
200
RDS(on) (ty
Qg (Max.) (nC)
VGS=10V
14
Qgs(nC)
3.0
Qgd (nC)
7.9
Configuration
Single
0.80
TO-220AB
D
J,
o
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
IRF620, SJHF620
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF620PbF
SiHF620-E3
IRF620
SiHF620
ABSOLUTE MAXIMUM RATINGS O'c = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
Tc = 25 °C
VyyUtlUV
mnoo
ID
TC = 1 00 C
Pulsed Drain Current3
'DM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Current3
Repetitive Avalanche Energy3
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
T0 = 25 "C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10s
Tj, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting Tj = 25 °C, L = 6.1 mH, Rg = 25 Q, IAS = 5.2 A (see fig. 12).
c. ISD < 5.2 A, dl/dt < 95 A/us, VDD < VDS, Tj < 150 °C.
d. 1.6 mm from case.
LIMIT
200
±20
5.2
3.3
18
0.40
110
5.2
5.0
50
5.0
-55 to +150
300d
10
1.1
UNIT
V
A
w/°c
mJ
A
mJ
W
V/ns
°C
Ibf • in
N-m
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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