IRF610 Datasheet, PDF (1/3 Pages) Intersil Corporation – 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

<^E.mi-(-on.au<2toi Lp
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRF610-613
MTP2N18/2N20
N-Channel Power MOSFETs,
3.5 A, 150-200 V
Power And Discrete Division
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high speed applications,
such as switching power supplies, converters, AC and DC
motor controls, relay and solenoid drivers and other pulse
circuits.
TO-220AB
LOW RDS(on)
VQS Rated at ± 20 V
Silicon Gate lor Fast Switching Speeds
loss. VDS(0n), Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
IRF610
IRF611
IRF612
IRF613
MTP2N18
MTP2N20
Maximum Ratings
Symbol
Characteristic
VDSS
VDGR
Drain to Source Voltage1
Drain to Gate Voltage1
RGS «= 20 kfi
VGS
Tj, TS|S
Gate to Source Voltage
Operating Junction and
Storage Temperatures
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Maximum On-State Characteristics
RDS(on) Static Drain-to-Source
On Resistance
b
Drain Current
Continuous at Tc = 25°C
Continuous at TO - 100°C
Pulsed
Maximum Thermal Characteristics
Rjjc
Thermal Resistance,
Junction to Case
RfljA
Thermal Resistance,
Junction to Ambient
PD
Total Power Dissipation
at Tc - 25°C
Rating
IRF610/612
MTP2N20
200
200
±20
-55 to +150
275
Rating
MTP2N18
180
180
±20
-55 to +150
275
IRF610/611
1.5
MTP2N18/20
1.8
2,5
3.25
1.5
2.25
10
9.0
6.4
2.5
80
80
20
50
Rating
IRF611/813
150
150
±20
-55 to +150
275
IRF612/613
2.4
2.0
1.25
8.0
6.4
80
20
Unit
V
V
V
°c
°c
n
A
°C/W
°C/W
W
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