IRF540 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

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20 STERN AVE.
SPRINGFIELD NEW JERSEY 07081
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/fl^fl IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
Features
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
Description
• 25A and 28A, 80V and 100V
• rDS(ON) = 0-077U and O.IOOfi
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
ters, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
intpnrated circuits.
Components to PC Boards"
Ordering Information
PART NUMBER
IRF540
IRF541
IRF542
IRF543
RF1S540
RF1S540SM
PACKAGE
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-262AA
TO-263AB
BRAND
IRF540
IRF541
IRF542
IRF543
RF1S540
RF1S540SM
Symbol
Go-
As
JEDEC TO-220AB
DRAIN (FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
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