IRF530 Datasheet, PDF (1/3 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

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IRF530
14A, 100V, 0.160 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
IRF530
TO-220AB
BRAND
IRF530
NOTE: When ordering, use the entire part number.
Features
• 14A, 100V
' rDS(ON) = 0
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
oD
Go
6S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
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