IRF510 Datasheet, PDF (1/2 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS Power FETs

<^E,mL-L.onaiLctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
IRF510, SJHF510
TELEPHONE: [phone]
[phone]
FAX: [phone]
PRODUCT SUMMARY
VDS(V)
100
^DSIon) (n)
Qg (Max.)(nC)
VGS = 10V
8.3
Qgs (nC)
2.3
Qgd(nC)
3.8
Configuration
Single
0.54
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
TO-220AB
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
N-Channel MOSFET
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF510PbF
SIHF510-E3
IRF510
SIHF510
ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Vv^s ait 1iu0vV Tc =25°C
ic=iOO O
Pulsed Drain Current3
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Current3
Repetitive Avalanche Energy3
Maximum Power Dissipation
Tc = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10s
ID
I DM
EAS
IAR
EAR
PD
dV/dt
Tj, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting Tj = 25 °C, L = 4.8 mH, Rg = 25 n, IAS = 5.6 A (see fig. 12).
c. ISD < 5.6 A, dl/dt < 75 A/us, VDD < VDS, Tj < 175 °C.
d. 1.6 mm from case.
LIMIT
100
±20
5.6
4.0
20
0.29
100
5.6
4.3
43
5.5
-5510 + 175
300d
10
1.1
UNIT
V
A
W/°C
mj
A
mJ
W
V/ns
°C
Ibf • in
N •m
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in itsuse.
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