IRF460 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET'TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF460
500V 0.27i2 21
IRF460
500V, N-CHANNEL
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• Hermetically Sealed
• Simple Drive Requirements
• Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = ov, TC = 25°c
ID @ VGS = ov, TC - ioo°c
IDM
PD @ TC - 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current <T)
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
HAS
Single Pulse Avalanche Energy ®
IAR
Avalanche Current ®
EAR
Repetitive Avalanche Energy ®
dv/dt
Peak Diode Recovery dv/dt <D
Tj
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
2!
14
A
84
300
W
2.4
w/°c
±20
V
1200
mJ
21
A
30
mJ
3.5
V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
1 1.5(typical)
g
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