IRF450 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

^E.fni~C.onauctot iJ10duct*., -One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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FAX: [phone]
IRF450/451/452/453
FEATURES
Low Ros<on) at high voltage
Improved Inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysillcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High voltage)
PRODUCT SUMMARY
Part Number
Vos
Boston)
ID
IRF250
soov 040
13A
IRF251
450V
0.40
13A
IRF252
500V
0.50
12A
IRF253
450V
0.50
12A
N-CHANNEL
POWER MOSFETS
TO-3
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Ro8=l.OMn)(l)
Gate-Source Voltage
Continuous Drain Current Tc=25°C
Continuous Drain Current Tc=-100°C
- Drain Current— Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation © To=25«C
Derate above 25°C
Operating and Storage •
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes, 1/8" from case for 5 seconds
Symbol
Voss
VDGR
Vos
to
ID
IDM
ISM
Po
Tj. Tstg
TL
IRF4SO
500
500 •
13
6.0
52
IRF451 IRF452
450
500
450
500
±20
13
12
8.0
7.0
52
46
±1.5
. 150
1.2
-55 to 150
300
Notes: (1) Tj=26°Cto 150°C
(2) Pulse tost: Pulse width<300jjs, Duty Cycled2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
IRF4S3
450
450
12
7.0
48
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Watts
wrc
•c
«c
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