IRF440 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

^zmi-dondiLctoi ^Ptodacti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRF440/441/442/443
FEATURES
Low Boston) at high voltage
Improved Inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polyslllcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High voltage)
PRODUCT SUMMARY
Part Number
VDS
Boston)
IHF440
500V 0.85 Q
IRF441
450V
0.850
IRF442
500V
1.100
IRF443
450V
1.100
ID
8.0A
8.0'A
7,OA
7.0A
N-CHANNEL
POWER MOSFETS
TO-3
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Ros=1.0Mfl)(1)
Gate-Source Voltage
Continuous Drain Current Tc=25°C
Continuous Drain Current Tc=100°C
Drain Current—Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation @ Tc=25°C
Derate above 2S°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes, 1/8" from case for 5 seconds
Symbol
VDSS
VDQR
VQS
ID
b
IDM
IGM
PD
Tj, TfitQ
Tu
IRF440
500
600
8.0
5.0
32
IRF441 IRF442
450
500
460
500
±20
8.0
7.0
5.0
4.0
32
28
±1.5
125
1.0
-55 to 150
300
Notes: (1) Tj=26°C to 150«C
(2) Pulse test: Pulse widlhOOOps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
IRF443
480
450
7.0
4.0
28
Unit
Vdc
Vdc
Vdo
Adc
Adc
Ado
Adc
Watts
W/«C
°C
•c
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