IRF420 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

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IRF420, IRF421, ^{FAX: [phone]}
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
Features
Description
• 2.2A and 2.5A, 450V and 500V
• rDS(ON)= 3-Ofi and 4.0Q
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
ters, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
• Related Literature
Ordering Information
Symbol
9D
PART NUMBER
PACKAGE
BRAND
IRF420
TO-204AA
IRF420
IRF421
TO-204AA
IRF421
IRF422
TO-204AA
IRF422
IRF423
TO-204AA
IRF423
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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