IRF350 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lf nc.
IRF350/351/352/353
FEATURES
Low RoS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polyslllcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (Standard)
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N-CHANNEL
POWER MOSFETS
TO-3
PRODUCT SUMMARY
Part Number
VDS
Ros(on)
ID
IRF260
400V
0.30
15A
IRF251
360V
0.30
15A
IRF252
400V
0.40
13A
IRF253
360V
0.40
13A
MAXIMUM RATINGS
• Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Rcs= 1 .OM 0) (1 )
Gate-Source Voltage
Continuous Drain Current TC=25°C
Continuous Drain Current TC-100'C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation @ TC=25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds
Symbol
Voss
VOGR
VGS
lo
ID
IDM
low
Po
Tj, Tstg
TL
IRF350
400
400
15
9.0
60
IRF351 IRF352
350
400
350
400
±20
15
13
9.0
8.0
60
52
±1.8
150
1.2
-65 to 150
300
Notes: (1) Tj=25°Cto 150°C
(2) Pulse test: Pulse width<300^s, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
IRF353
360
350
13
8.0
52
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Watts
W/°C
«c
•c
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