IRF340 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

^EtnL-donductoi ^Products., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF340
400V 0.55Q IDA
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRF340
400V, N-CHANNEL
Features:
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• Hermetically Sealed
• Simple Drive Requirements
• Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = ov, TC = 25°c
ID @ VGS - ov, TC = ioo°c
IDM
PD @ TC = 25°c
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current CD
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
HAS
Single Pulse Avalanche Energy ©
IAR
Avalanche Current ®
EAR
Repetitive Avalanche EnergyCD
dv/dt
Peak Diode Recovery dv/dt <S>
Tj
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
10
6.0
A
40
125
w
1.0
w/°c
±20
V
5.7
mJ
10
A
-
mJ
4.0
V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for10s)
1 1.5(typical)
g
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