IRF320 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

, (inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF322,
ELEPHONE: [phone]
[phone]
IRF323
FAX: [phone]
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs
Features
Description
• 2.8A and 3.3A, 350V and 400V
' rDS(ON) = 1.8iiand2.5ii
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
ters, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Symbol
OD
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF320
TO-204AA
IRF320
IRF321
TO-204AA
IRF321
IRF322
TO-204AA
IRF322
IRF323
TO-204AA
IRF323
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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