IRF250 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF250/2511252/253
FEATURES
LOW RoS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polyslllcon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High current)
PRODUCT SUMMARY
Part Number
Vps
RoS(on)
ID
IRF250
200V 0.0850 30A
IRF251
150V 0.0850 30A
IRF252
200V 0.120
2SA
IRF253
150V 0.120
25A
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FAX: [phone]
N-CHANNEL
POWER MOSFETS
TO-3
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gale Voltage (RGs=1.0MO)(1)
Gate-Source Voltage
Continuous Drain, Current Tc=25°C
Continuous Drain Current Tc-100°C
Drain Current— Pulsed (3)
Gate Current—Pulsed
Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds
Symbol
VDSS
VDOR
Ves
ID
ID
IDM
IQM
PD
Tj, Tstg
TL
IRF2SO
200
200
30
19
120
IRF251 IRF2S2
150
200
150
200
±20
30
25
19
16
120
100
±1.6
150
1.2
-55 to 1 50
300
Notes: (1) Tj=25"C to 150°C
(2) Pulse test: Pulse wldthOOOps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
IRF2S3
150
150
25
16
100
Unit
Vdc
Vdc
Vdc
Ado
Adc
Adc
Adc
Watts
W/°C
°C
«c
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