IRF240 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFET

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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
IRF240
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF240
200V 0.1 8ii ISA
The HEXFET®technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Parallel ing
Absolute Maximum Ratings
ID @ VGS = ov, TC = 25°c
ID @ VGS = ov, TC = ioo°c
IDM
PD @TC - 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain CurrentCD
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
HAS
Single Pulse Avalanche Knergy 0
IAR
Avalanche Current CD
EAR
Repetitive Avalanche Energy (D
dv/dt
Peak Diode Recovery dv/dt ®
Tj
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
I8
11
A
72
125
w
1.0
w/°c
±20
V
450
mJ
18
A
12.5
mJ
5.0
V/ns
-55 to 150
°c
300 (0.063 in. (1.6mm) from case for 10s)
1 1.5(typical)
g
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