IRF230 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high power, high speed
applications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid drivers and
high energy pulse circuits.
Low RDS(on)
VQS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
'oss. vos(on), Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
IRF230-233/IRF630-633
MTP12N18/12N20
N-Channel Power MOSFETs,
12 A, 150-200 V
Power And Discrete Division
TO-204AA
TO-220AB
Product Summary
Part Number
IRF230
IRF231
IRF232
IRF233
IRF630
IRF631
IRF632
IRF633
MTP12N18
MTP12N20
VDSS
200 V
160 V
200 V
150 V
200 V
150 V
200 V
150 V
180 V
200 V
RDS (on)
0.40 n
0.40 n
o.so n
o.so n
0.40 n
0.40 JJ
o.so n
o.so n
0.35 n
0.35 n
Not«
For information concerning connection diagram and package outline, refer to
Section 7.
ID at
Tc = 25°C
9.0 A
9.0 A
B.O A
8.0 A
9.0 A
9.0 A
8.0 A
8.0 A
12 A
12 A
ID at
Tc = 100°C
6.0 A
6.0 A
5.0 A
5.0 A
6.0 A
6.0 A
5.0 A
5.0 A
8.5 A
8.5 A
Case Style
TO-204AA
TO-220AB
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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