IRF150 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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FAX: [phone]
IRF150/151/152/153
FEATURES
LOW RoS(on)
Improved Inductive ruggedness
Fast switching times •
Rugged polyslllcon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High current)
PRODUCT SUMMARY
Part Number
Vos
Rosion)
ID
IRF1 50
100V 0.0550 40A
IHF151
60V 0.055Q 40A
IRF152
100V 0.080
33A
IHF153
60V 0.08 0
33A
N-CHANNEL
POWER MOSFETS
TO-3
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Ros= 1 .OMO) (1 )
Gate-Source Voltage
Continuous Drain Current Tc~25cC
Continuous Drain Current TC-=100°C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation © Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, (or Soldering
Purposes. 1/8" from case for 5 seconds
Symbol
Voss
VDQR
VQS
lo
to
(DM
low
Po
Tj, Tstg
TL
IRF150
100
100
40
25
160
IRF1S1
60
IRF152
100
60
100
±20
40
33
25
20
160
132
±1.5
160
1.2
-55 to 150
300
Notes: (1) Tj-25''C to 150°C
(2) Pulse test: Pulse width<300ps, Duty Cyc!e<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
IRF163
60
60
33
20
132
Unit
Vdc
Vdc
Vdc
Ado
Adc
Adc
Adc
Watts
VWC
»c
»c
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